Compact and inexpensive radar systems are an important prerequisite for advanced driver assistance systems (ADAS) and the self-driving car. Today's radar systems rely on the hybrid integration of RF circuits in SiGe technology with digital circuits in CMOS technology. The progress of technology now allows moving to pure CMOS single-chip solutions that include the digital baseband, A/D and D/A signal converters as well as millimeter-wave circuits beyond 100 GHz on a single IC.
In this project, INT and our partners from the Institute for Robust Power Semiconductor Systems (ILH) have designed a complete mixed signal transmitter integrated circuit in 22 nm FD-SOI (Fully Depleted Silicon On Insulator) CMOS with low power consumption. INT has designed the baseband consisting of a digital pulse shaping circuit for binary pseudo random input sequences with a subsequent D/A converter. ILH has designed the complete RF front-end including upconversion and millimeter-wave amplification. The target application of the IC are broadband radar systems in which the carrier signal is modulated with a pseudo random noise signal.
Publications
2022
- D. Widmann, R. Nägele, M. Grözing, and M. Berroth, “Mixed-Signal Integrated Circuit for Direct Raised-Cosine Filter Waveform Synthesis of Digital Signals Up to 24 GS/s in 22 nm FD-SOI CMOS Technology,” in IEEE International Symposium on Circuits and Systems (ISCAS), 2022, p. paper ID 1248.
2021
- D. Widmann, R. Nägele, and A. Gatzastras, “140 GHz Transmitter Chip for Pseudo Random Noise Radar in 22 nm FD-SOI CMOS Technology,” in EUROPRACTICE activity report 2020 - 2021, 2021, p. 22.
Contact
Raphael Nägele
M. Sc.Research staff member
Athanasios Gatzastras
M.Sc.Research Assistant