INT Forschung: Integrated polarization mode interferometer in 220-nm silicon-on-insulator technology

30. August 2022 / INT

Das INT hat einen Beitrag in "Optics Letters" veröffentlicht.
[Bild: opg.optica.org/ol]

Integrated polarization mode interferometer in 220-nm silicon-on-insulator technology

Christian Schweikert, Anastasia Tsianaka, Niklas Hoppe, Rouven H. Klenk, Raik Elster, Markus Greul, Mathias Kaschel, Alexander Southan, Wolfgang Vogel, and Manfred Berroth

Abstract — A compact integrated and high-efficiency polarization mode interferometer in the 220-nm silicon-on-insulator platform is presented. Due to the operation with two polarization modes in a single waveguide, low propagation losses and high sensitivities combined with a small footprint are achieved. The designed and fabricated system with a 5-mm-long sensing region shows a measured excess loss of only 1.5 dB with an extinction ratio up to 30 dB, while its simulated homogeneous bulk sensitivity can exceed 8000 rad/RIU. The combination with a 90° hybrid readout system offers single wavelength operation with unambiguousness for phase shifts up to 2π and constant sensitivity.

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